fall time t turn-off delay time t rise time t turn-on delay time t capacitance capacitance input capacitance c resistance on-state drain current i resistance on-state drain curren features * 100 volt v ds *r ds(on) =20 w complementary type - zvn3310f absolute maximum ratings. parameter symbol value unit drain-source voltage v ds -100 v continuous drain current at t amb =25c i d 75 ma pulsed drain current i dm -1.2 a gate source voltage v gs 20 v power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss -100 v i d =-1ma, v gs =0v gate-source threshold voltage v gs(th) -1.5 -3.5 v i d =-1ma, v ds = v gs gate-body leakage i gss -20 na v gs = 20v, v ds =0v zero gate voltage drain current i dss -1 -50 m a m a v ds =-100v, v gs =0 v ds =-80v, v gs =0v, t=125c d(on) -300 ma v ds =-25 v, v gs static drain-source on-state r ds(on) 20 w v gs =-10v, i d =-150ma forward transconductance g fs 50 ms v ds =-25v, i d =-150ma iss 50 pf common source output c oss 15 pf v ds =-25v, v gs =0v, f=1mhz reverse transfer c rss 5pf d(on) 8ns v dd ? -25v, i d =-150ma r 8ns d(off) 8ns f 8ns zvp3310f d g s 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 1 of 1
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